dual igbtmod? nfh-series module 600 amperes/600 volts CM600DU-12NFH 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 rev. 3 description: powerex igbtmod? modules are designed for use in high frequency applications; 30 khz for hard switching applications and 60 to 70 khz for soft switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low v ce(sat) low e sw(off) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: power supplies induction heating welders ordering information: example: select the complete part module number you desire from the table below -i.e. CM600DU-12NFH is a 600v (v ces ), 600 ampere dual igbtmod? power module. type current rating v ces amperes volts (x 50) cm 600 12 outline drawing and circuit diagram dimensions inches millimeters a 4.33 110.0 b 3.15 80.0 c 1.14+0.04/-0.01 29.0+1.0/-0.5 d 3.660.01 93.00.25 e 2.440.01 62.00.25 f 0.83 21.2 g 0.28 7.0 h 0.24 6.0 j 0.59 15.0 k 0.55 14.0 l 0.35 9.0 m 0.33 8.5 n 0.69 17.5 p 0.85 21.5 dimensions inches millimeters q 0.98 25.0 r 1.23 31.4 s m6 metric m6 t 0.26 dia. 6.5 dia. u 0.4 10.0 v 0.16 4.0 w 0.87 22.2 x 0.72 18.25 y 0.36 9.25 z 0.71 18.0 aa 0.11 2.8 ab 0.29 7.5 ac 0.21 5.3 ad 0.47 12.0 h h v g2 e2 e1 g1 c2e1 c1 x b w e u y a d p q q z k g ac ad z z c f m ab aa v m m l l g s - nuts (3 typ) t - (4 typ) label c2e1 e2 tr 2 tr 1 di1 di2 c1 e1 g1 e2 g2 k k j e2 n r tolerance otherwise specified (mm) division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2
CM600DU-12NFH dual igbtmod? nfh-series module 600 amperes/600 volts 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 rev. 3 absolute maximum ratings, t j = 25 c unless otherwise specifed item symbol rating units collector-emitter voltage (g-e short-circuited) v ces 600 volts gate-emitter voltage (c-e short-circuited) v ges 20 volts collector current (operation) *5 i c 600 amperes collector current (operation) *5 i c(rms) 400 amperes collector current (pulse, repetitive) *4 i crm 1200 amperes total power dissipation (t c = 25c) *2,*5 p tot 1130 watts total power dissipation (t c ' = 25c) *3,*5 p tot ' 2350 watts emitter current (free wheeling diode forward current, operation) *5 i e *1 600 amperes emitter current (free wheeling diode forward current, operation) *5 i e(rms) *1 400 amperes emitter current (free wheeling diode forward current, operation, pulse, repetitive) *4 i erm *1 1200 amperes junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 min.) v iso 2500 volts *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. *3 case temperature (t c ') and heatsink temperature (t s ') is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance {r th(s-a) } should be measured just under the chips. *4 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *5 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. 0 29.4 44.2 77.2 29.4 44.2 64.8 32.0 44.4 27.3 42.1 g2 e2 e1 g1 c2e1 c1 e2 0 0 0 label side each mark points to the center position of each chip. tr1 / tr2 : igbt di1 / di2 : fwdi di1 di1 tr 1 tr 1 di2 di2 tr 2 tr 2
CM600DU-12NFH dual igbtmod? nfh-series module 600 amperes/600 volts 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 rev. 3 electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 5.0 6.0 7.0 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c *6 2.0 2.7 volts i c = 600a, v ge = 15v, t j = 125c *6 1.95 volts input capacitance c ies 166 nf output capacitance c oes v ce = 10v, v ge = 0v 11 nf reverse transfer capacitance c res 6.0 nf gate charge q g v cc = 300v, i c = 600a, v ge = 15v 3720 nc turn-on delay time t d(on) 650 ns rise time t r v cc = 300v, i c = 600a, 250 ns turn-off delay time t d(off) v ge = 15v, r g = 2.0, 800 ns fall time t f inductive load switching operation 150 ns emitter-collector voltage v ec *1 i e = 600a, v ge = 0v *6 2.0 2.6 volts reverse recovery time t rr *1 v cc = 300v, i e = 600a, v ge = 15v 200 ns reverse recovery charge q rr *1 r g = 2.0?, inductive load 11 c turn-on switching energy per pulse e on v cc = 300v, i c = i e = 600a, 11 mj turn-off switching energy per pulse e off v ge = 15v, r g = 2.0?, 27 mj reverse recovery energy per pulse e rr *1 t j = 125c, inductive load 6.3 mj internal gate resistance r g per switch 0.8 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *6 pulse width and repetition rate should be such as to cause negligible temperature rise.
CM600DU-12NFH dual igbtmod? nfh-series module 600 amperes/600 volts 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 rev. 3 thermal resistance characteristics thermal resistance, junction to case *2 r th(j-c) q per igbt 0.11 k/w thermal resistance, junction to case *2 r th(j-c) d per fwdi 0.12 k/w contact thermal resistance, r th(c-f) thermal grease applied 0.02 k/w case to heatsink *2 (per 1 module) *7 thermal resistance, junction to case *3 r th(j-c ' ) q per igbt 0.053 k/w thermal resistance, junction to case *3 r th(j-c ' ) d per fwdi 0.078 k/w mechanical characteristics mounting torque m t main terminals, m6 screw 31 35 40 in-lb m s mounting to heatsink, m6 screw 31 35 40 in-lb weight m 580 grams flatness of baseplate e c on centerline x, y *8 -100 + 100 m recommended operating conditons, t a = 25c (dc) supply voltage v cc applied across c1-e2 300 400 volts gate (-emitter drive) voltage v ge(on) applied across g1-es1 / g2-es2 13.5 15.0 16.5 volts external gate resistance r g per switch 1.0 10 ? *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *3 case temperature (t c ') and heatsink temperature (t s ') is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance {r th(s-a) } should be measured just under the chips. *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. 0 29.4 44.2 77.2 29.4 44.2 64.8 32.0 44.4 27.3 42.1 g2 e2 e1 g1 c2e1 c1 e2 0 0 0 label side each mark points to the center position of each chip. tr1 / tr2 : igbt di1 / di2 : fwdi di1 di1 tr 1 tr 1 di2 di2 tr 2 tr 2 x bottom ? concave 3 mm + convex ? concave + convex bottom bottom label side y
CM600DU-12NFH dual igbtmod? nfh-series module 600 amperes/600 volts 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 rev. 3 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 1 0 0.5 1.5 2.0 2.5 1.0 3.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 10 2 10 4 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 6 4 2 8 10 14 12 16 18 20 4 3 2 1 0 t j = 25c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 1200a i c = 600a i c = 240a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 1 2 3 4 5 200 0 v ge = 20v 8 8.5 9.5 10 9 15 7.5 7 t j = 25 c 400 600 1200 800 1000 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 3.0 2.0 1.5 1.0 0 200 600 2.5 0.5 0 1200 800 1000 v ge = 15v t j = 25c t j = 125c 400 10 -1 11 13 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 10 3 half-bridge switching characteristics (typical) t d(off) t d(on) t r t f v cc = 300v v ge = 15v r g = 2.0? t j = 125c inductive load switching time, (ns) gate resistance, r g , ( ) 10 4 10 -1 10 0 10 1 10 3 10 2 10 2 half-bridge switching characteristics (typical) t d(off) t d(on) t r t f v cc = 300v v ge = 15v i c = 600a t j = 125c inductive load switching time, (ns) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 1000 2000 3000 4000 5000 v cc = 300v v cc = 200v i c = 600a t j = 25c emitter current, i e , (amperes) reverse recovery, i r r , (amperes), t r r , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 300v v ge = 15v r g = 2.0? t j = 25c inductive load i r r t r r
CM600DU-12NFH dual igbtmod? nfh-series module 600 amperes/600 volts 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 rev. 3 10 2 10 1 10 2 10 1 10 0 v cc = 300v v ge = 15v r g = 2.0? t j = 125c inductive load 10 3 10 2 10 -1 10 0 10 1 10 1 10 0 v cc = 300v v ge = 15v i c = 600a t j = 125c inductive load 10 2 time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c' = 25c per unit base = r th( j-c') = 0.053c/w (igbt) r th( j-c') = 0.078c/w (fwdi) normalized transient thermal impedance, z t h ( j-c') e on e off e rr e on e off e rr switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) collector current, i c , (amperes) emitter current, i e , (amperes) half-bridge switching characteristics (typical) gate resistance, r g , (?) half-bridge switching characteristics (typical)
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